Organic Semiconductor Field-Effect Transistors Enabled by Organic-2D Hetero structures: A Vis a Vis Study

Authors

  • Dr. Anil Kumar Shrotriya and Anita Raj

DOI:

https://doi.org/10.8224/journaloi.v72i4.182

Abstract

Over the past thirty years, organic semiconductor field-effect transistors (OFETs) have gained significant attention for their potential in flat panel displays, radio frequency identifications, and sensors. The performance of OFETs, including carrier mobility, threshold voltage, and on/off current ratio, depends on the ordering and electronic structure of the organic semiconductor (OSC) films. Typically, OSC films struggle to achieve high ordering on inert substrates and often face stability issues on traditional single crystal surfaces. The emergence of two-dimensional (2D) materials offers a solution, as their in-plane lattice can serve as effective epitaxy templates for OSCs. Additionally, the weak van der Waals interactions between OSCs and 2D materials provide more flexibility for OSC growth and allow for improved electronic structures through interface doping. This review highlights recent advances in OSC-2D hybrid OFETs, which enhance device performance through improved film morphology and electronic structure, while also serving as platforms for organic physics research and advanced optoelectronic devices.

Published

2000

How to Cite

Dr. Anil Kumar Shrotriya and Anita Raj. (2024). Organic Semiconductor Field-Effect Transistors Enabled by Organic-2D Hetero structures: A Vis a Vis Study. Journal of the Oriental Institute, ISSN:0030-5324 UGC CARE Group 1, 72(4), 75–88. https://doi.org/10.8224/journaloi.v72i4.182

Issue

Section

Articles